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The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors by Kwang-Ho Lee & Kyung-Chul Ok & H. Kim & Jin-Seong Park

Author:Kwang-Ho Lee & Kyung-Chul Ok & H. Kim & Jin-Seong Park , Date: November 29, 2023 ,Views: 63

The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors by Kwang-Ho Lee & Kyung-Chul Ok & H. Kim & Jin-Seong Park

Author:Kwang-Ho Lee & Kyung-Chul Ok & H. Kim & Jin-Seong Park
Format: pdf
Tags: Oxide semiconductor, Thin film transistor, Ge–In–Ga–O, Oxygen pressure, Bias stability
Publisher: Elsevier
Published: 2013-11-28T07:20:41+00:00


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The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors by Kwang-Ho Lee & Kyung-Chul Ok & H. Kim & Jin-Seong Park.pdf


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